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MSCSM70HM038AG

MOSFET Modules PM-MOSFET-SIC-SP6C
Technical Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 464A (Tc)
Rds On (Max) @ Id, Vgs 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 18000pF @ 700V
Power - Max 1277W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Product Attributes
Packaging
Standard Pack Qty1
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,274
In Stock
Packaging:
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✔ Global Shipping
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFET Modules
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 140 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

MSCSM70HM038AG by Microchip Technology is a mosfet modules designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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