| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Packaging | Bulk |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Manufactured by Microchip Technology, the 2N3636 is classified as a bipolar transistors - bjt. Key specifications include a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 175 V, a vce saturation (max) @ ib, ic of 600mV @ 5mA, 50mA, a current, collector cutoff of 10µA and a DC current gain (hfe) (min) @ ic, vce of 50 @ 50mA, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N3636 from Simplytronix for authenticated stock and same-day order processing.