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2N5680

Bipolar Transistors - BJT 120V PVP Power BJT THT
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA, 2V
Power - Max 1 W
Frequency - Transition -
Operating Temperature -
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,513
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 336 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Microchip Technology's 2N5680 is a widely used bipolar transistors - bjt in electronic designs. Key specifications include a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 120 V, a vce saturation (max) @ ib, ic of 1V @ 50mA, 500mA, a current, collector cutoff of 10µA and a DC current gain (hfe) (min) @ ic, vce of 40 @ 250mA, 2V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N5680 from Simplytronix for authenticated stock and same-day order processing.

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