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2N2946A

Bipolar Transistors - BJT 35V 200mA 400mW Small-Signal BJT THT
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 35 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1mA, 500mV
Power - Max 400 mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-46-3
Supplier Device Package TO-46-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,663
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Microchip Technology's 2N2946A is a widely used bipolar transistors - bjt in electronic designs. Key specifications include a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 35 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 10µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 50 @ 1mA, 500mV. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N2946A from Simplytronix for authenticated stock and same-day order processing.

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