| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Power - Max | 25 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C |
| Grade | Military |
| Qualification | MIL-PRF-19500/518 |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Packaging | Tray |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 336 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290065 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
Microchip / Microsemi's Jantx2N3767 is a widely used bipolar transistors - bjt in electronic designs. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 2.5V @ 100mA, 1A, a current, collector cutoff of 500µA and a DC current gain (hfe) (min) @ ic, vce of 40 @ 500mA, 5V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. You can source Jantx2N3767 through Simplytronix, with fast shipping and verified authenticity.
