| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | 750 mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/485 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Packaging | Bulk |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 408 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The Jantx2N5416S from Microchip / Microsemi falls under the bipolar transistors - bjt category. It features a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 300 V, a vce saturation (max) @ ib, ic of 2V @ 5mA, 50mA, a current, collector cutoff of 1mA and a DC current gain (hfe) (min) @ ic, vce of 30 @ 50mA, 10V. This part has a typical lead time of 408 Days from factory and ships with a full manufacturer datasheet available for download. Order Jantx2N5416S from Simplytronix for authenticated stock and same-day order processing.
