*For representation only.
Jan2N930
Microchip / Microsemi
Active
Bipolar Transistors - BJT 45V 30mA 300mW NPN Small-Signal BJT THT
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10µA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/253 |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 1 |
7,619
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 336 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
Jan2N930 is a bipolar transistors - bjt manufactured by Microchip / Microsemi. This component is defined by a transistor type of NPN, a current, collector (ic) of 30 mA, a voltage, collector emitter breakdown of 45 V, a vce saturation (max) @ ib, ic of 1V @ 500µA, 10mA, a current, collector cutoff of 2nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 10µA, 5V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. You can source Jan2N930 through Simplytronix, with fast shipping and verified authenticity.