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JANSR2N3810U

Bipolar Transistors - BJT 60V 50mA 350mW Dual RH Small-Signal BJT SQ SMT
Technical Specifications
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Power - Max 350mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/336
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
📦 Product Attributes
Packaging Tray
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,269
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210075
TARIC 8541210000
ECCN EAR99
Product Overview

The JANSR2N3810U from Microchip / Microsemi falls under the bipolar transistors - bjt category. This component is defined by a transistor type of 2 PNP (Dual), a current, collector (ic) of 50mA, a voltage, collector emitter breakdown of 60V, a vce saturation (max) @ ib, ic of 250mV @ 1mA, 100µA, a current, collector cutoff of 10µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 150 @ 1mA, 5V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries JANSR2N3810U in stock, backed by a genuine parts guarantee and quick dispatch.

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