*For representation only.
Jan2N3810U/TR
Microchip / Microsemi
Active
Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT SQ SMT TR
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Technical Specifications
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 1 |
3,472
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 350 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Microchip / Microsemi, the JAN2N3810U/TR is classified as a bipolar transistors - bjt. Key specifications include a transistor type of 2 PNP (Dual), a current, collector (ic) of 50mA, a voltage, collector emitter breakdown of 60V, a vce saturation (max) @ ib, ic of 250mV @ 100µA, 1mA, a current, collector cutoff of 10µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 150 @ 1mA, 5V. This part has a typical lead time of 350 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks JAN2N3810U/TR for same-day shipping with genuine parts guaranteed.
