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PH3135-90S MACOM
*For representation only.

PH3135-90S

MACOM Active
RF Bipolar Transistors 3.1-3.5GHz 90W 2us Pulse
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition -
Noise Figure (dB Typ @ f) -
Gain 7.5dB
Power - Max 580W
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector (Ic) (Max) 10.7A
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 2L-FLG
Supplier Device Package -
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 20
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,696
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8542330000
CAHTS 8542330000
USHTS 8541290065
MXHTS 8542330201
ECCN EAR99
Product Overview

Manufactured by MACOM, the PH3135-90S is classified as a rf bipolar transistors. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 65V, a frequency, transition of -, a noise figure of -, a gain of 7.5dB and a power, max of 580W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order PH3135-90S from Simplytronix for authenticated stock and same-day order processing.

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