| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Gain | 7.5dB |
| Power - Max | 580W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | 10.7A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 2L-FLG |
| Supplier Device Package | - |
| Packaging | Bulk |
| Standard Pack Qty | 20 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8542330000 |
| CAHTS | 8542330000 |
| USHTS | 8541290065 |
| MXHTS | 8542330201 |
| ECCN | EAR99 |
Manufactured by MACOM, the PH3135-90S is classified as a rf bipolar transistors. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 65V, a frequency, transition of -, a noise figure of -, a gain of 7.5dB and a power, max of 580W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Order PH3135-90S from Simplytronix for authenticated stock and same-day order processing.