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PH1214-55EL

MACOM Active
RF Bipolar Transistors Transistor,Bipolar,55W,28V,1.20-1.40GHz
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 58V
Frequency - Transition 1.4GHz
Noise Figure (dB Typ @ f) -
Gain 6.6dB
Power - Max 220W
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector (Ic) (Max) 7A
Operating Temperature 200°C
Mounting Type Chassis Mount
Package / Case 2L-FLG
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 20
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,551
Units In Stock
📦
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 196 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The PH1214-55EL from MACOM falls under the rf bipolar transistors category. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 58V, a frequency, transition of 1.4GHz, a noise figure of -, a gain of 6.6dB and a power, max of 220W. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. Order PH1214-55EL from Simplytronix for authenticated stock and same-day order processing.

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