*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 7.5dB |
| Power - Max | 195W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | 3A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 2L-FLG |
| Supplier Device Package | 2L-FLG |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 20 |
9,265
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| ECCN | EAR99 |
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Product Overview
Manufactured by MACOM, the PH3135-25S is classified as a rf bipolar transistors. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 65V, a frequency, transition of 3.5GHz, a noise figure of -, a gain of 7.5dB and a power, max of 195W. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source PH3135-25S through Simplytronix, with fast shipping and verified authenticity.
