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IXFT94N30T IXYS
*For representation only.

IXFT94N30T

IXYS Active
MOSFETs Trench HiperFET Power MOSFET
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 25 V
FET Feature -
Power Dissipation (Max) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,522
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 175 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541290065
TARIC 8541500000
MXHTS 85415001
BRHTS 85415020
ECCN EAR99
Product Overview

IXFT94N30T is a mosfets manufactured by IXYS. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 300 V and a current, continuous drain (id) @ 25°C of 94A (Tc). This part has a typical lead time of 175 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IXFT94N30T for same-day shipping with genuine parts guaranteed.

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