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IXFK150N30P3 IXYS
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IXFK150N30P3

IXYS Active
MOSFETs N-Channel: Power MOSFET w/Fast Diode
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12100 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 25
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,715
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 259 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
MXHTS 8541299900
BRHTS 85415020
ECCN EAR99
Product Overview

IXFK150N30P3 is a mosfets manufactured by IXYS. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 300 V, a current, continuous drain (id) @ 25°C of 150A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 19mOhm @ 75A, 10V. This part has a typical lead time of 259 Days from factory and ships with a full manufacturer datasheet available for download. You can source IXFK150N30P3 through Simplytronix, with fast shipping and verified authenticity.

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