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IXFK230N20T

IXYS Active
MOSFETs 230A 200V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 378 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1670W (Tc)
Operating Temperature -
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA
Product Attributes
Packaging Tube
Standard Pack Qty25
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,014
In Stock
Packaging: Tube
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✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 168 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
Product Overview

IXFK230N20T by IXYS is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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