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MMIX1T500N20X4-TU IXYS
*For representation only.

MMIX1T500N20X4-TU

MOSFETs 200V < 2mohm X4 n-channel MOSFET in SMPD -X
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 480A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.99mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 535 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 41500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1070W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 24-SMPD
Package / Case 24-PowerSMD, 21 Leads
📦 Product Attributes
Packaging Tube
Standard Pack Qty 20
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,100
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 210 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by IXYS, the MMIX1T500N20X4-TU is classified as a mosfets. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 200 V, a current, continuous drain (id) @ 25°C of 480A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 1.99mOhm @ 100A, 10V. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. You can source MMIX1T500N20X4-TU through Simplytronix, with fast shipping and verified authenticity.

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