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IXTH90P10P IXYS
*For representation only.

IXTH90P10P

IXYS Active
MOSFETs -90.0 Amps -100V 25 mOhms
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 462W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247 (IXTH)
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,132
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541500000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
MXHTS 85415001
ECCN EAR99
Product Overview

Manufactured by IXYS, the IXTH90P10P is classified as a mosfets. Notable characteristics of this part include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 90A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 25mOhm @ 45A, 10V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IXTH90P10P in stock, backed by a genuine parts guarantee and quick dispatch.

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