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ISC031N08NM6SCATMA1 Infineon Technologies
*For representation only.

ISC031N08NM6SCATMA1

OptiMOS 6 n-channel power MOSFET 80 V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 145A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 65µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-WSON-8-2
Package / Case 8-PowerWDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,901
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 52 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Infineon Technologies's ISC031N08NM6SCATMA1 is a widely used component in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 21A (Ta), 145A (Tc), a drive voltage of 8V, 10V and a rds on (max) @ id, vgs of 3.1mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory. Simplytronix carries ISC031N08NM6SCATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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