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BSS138IXUSA1

SMALL SIGNAL MOSFETS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 32 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3-U03
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,414
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the BSS138IXUSA1 is classified as a component. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 230mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 3.5Ohm @ 230mA, 10V. This part has a typical lead time of 112 Days from factory. Order BSS138IXUSA1 from Simplytronix for authenticated stock and same-day order processing.

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