Search Products

Menu
No Image
*For representation only.

BSS139IXUSA1

SMALL SIGNAL MOSFETS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23-3-U03
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,898
Units In Stock
📦 Reel
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the BSS139IXUSA1 is classified as a component. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 250 V, a current, continuous drain (id) @ 25°C of 100mA (Ta), a drive voltage of 0V, 10V and a rds on (max) @ id, vgs of 14Ohm @ 100mA, 10V. This part has a typical lead time of 56 Days from factory. You can source BSS139IXUSA1 through Simplytronix, with fast shipping and verified authenticity.

Similar Products
No Image
BSS138IXUSA1 Infineon Technologies
SMALL SIGNAL MOSFETS
No Image
BSS169IXUSA1 Infineon Technologies
SMALL SIGNAL MOSFETS
IKQ150N75EH7XKSA1
IKQ150N75EH7XKSA1 Infineon Technologies
High speed and low saturation voltage 750 V TRENCHSTOP IGB...