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IRFP7537PBFXKMA1

IR FET UP TO 60V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 172A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7020 pF @ 25 V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-901
Package / Case TO-247-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 400
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,451
Units In Stock
📦 Reel
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
Product Overview

Manufactured by Infineon Technologies, the IRFP7537PBFXKMA1 is classified as a component. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 172A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 3.3mOhm @ 100A, 10V. This part has a typical lead time of 112 Days from factory. Simplytronix stocks IRFP7537PBFXKMA1 for same-day shipping with genuine parts guaranteed.

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