| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 411 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13703 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-901 |
| Package / Case | TO-247-3 |
| Packaging | Reel |
| Standard Pack Qty | 400 |
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
IRFP7530PBFXKMA1 is a component manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 195A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 2mOhm @ 100A, 10V. This part has a typical lead time of 112 Days from factory. Order IRFP7530PBFXKMA1 from Simplytronix for authenticated stock and same-day order processing.
