| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5860 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 56 Days (from factory) |
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
IRFB4332PBFXKMA1 is a component manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 250 V, a current, continuous drain (id) @ 25°C of 60A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 33mOhm @ 35A, 10V. This part has a typical lead time of 56 Days from factory. You can source IRFB4332PBFXKMA1 through Simplytronix, with fast shipping and verified authenticity.
