| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta), 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1411 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric MZ |
| Package / Case | DirectFET™ Isometric MZ |
| Packaging | Reel |
| Standard Pack Qty | 4800 |
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 140 Days (from factory) |
Infineon Technologies's IRF6775MTRPBFXTMA1 is a widely used component in electronic designs. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 4.9A (Ta), 28A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 56mOhm @ 5.6A, 10V. This part has a typical lead time of 140 Days from factory. You can source IRF6775MTRPBFXTMA1 through Simplytronix, with fast shipping and verified authenticity.
