| Technology | SiCFET (Silicon Carbide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 27A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 800V |
| Power - Max | 410W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad |
| Supplier Device Package | PG-HDSOP-16-221 |
| Packaging | Reel |
| Standard Pack Qty | 750 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 30 Days (from factory) |
| Country | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IMSQ120R026M2HHXUMA1 by Infineon Technologies is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
