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IMZC120R007M2HXKSA1 Infineon Technologies
*For representation only.

IMZC120R007M2HXKSA1

SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 201A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 93A, 18V
Vgs(th) (Max) @ Id 5.1V @ 29.1mA
Gate Charge (Qg) (Max) @ Vgs 176 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 6570 pF @ 800 V
FET Feature -
Power Dissipation (Max) 711W (Tc)
Operating Temperature -55°C ~ 175°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-4-17
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 240
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,553
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 315 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the IMZC120R007M2HXKSA1 is classified as a sic mosfets. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 201A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 7.5mOhm @ 93A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IMZC120R007M2HXKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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