| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 201A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 93A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 29.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 6570 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 711W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-17 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the IMZC120R007M2HXKSA1 is classified as a sic mosfets. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 201A (Tc), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 7.5mOhm @ 93A, 18V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IMZC120R007M2HXKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.