*For representation only.
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Technical Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 2000V (2kV) |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tj) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 160A, 18V |
| Vgs(th) (Max) @ Id | 5.15V @ 112mA |
| Gate Charge (Qg) (Max) @ Vgs | 780nC @ 3V |
| Input Capacitance (Ciss) (Max) @ Vds | 24100pF @ 1200V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 15 |
5,676
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's FF6MR20W2M1HB70BPSA1 is a widely used component in electronic designs. Notable characteristics of this part include a technology of Silicon Carbide (SiC), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 2000V (2kV), a current, continuous drain (id) @ 25°C of 160A (Tj) and a rds on (max) @ id, vgs of 8.1mOhm @ 160A, 18V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. You can source FF6MR20W2M1HB70BPSA1 through Simplytronix, with fast shipping and verified authenticity.