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IRFP4868PBFAKMA1

TRENCH >=100V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 42A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10774 pF @ 50 V
FET Feature -
Power Dissipation (Max) 517W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-901
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 400
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,139
Units In Stock
📦 Tube
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🔑 Key Specifications
Category
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 98 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

IRFP4868PBFAKMA1 is a component manufactured by Infineon Technologies. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 300 V, a current, continuous drain (id) @ 25°C of 70A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 32mOhm @ 42A, 10V. This part has a typical lead time of 98 Days from factory. Simplytronix carries IRFP4868PBFAKMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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