| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 125A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 620 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 470W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-901 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 400 |
| Category | |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the IRFP2907PBFXKMA1 is classified as a component. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 75 V, a current, continuous drain (id) @ 25°C of 209A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 4.5mOhm @ 125A, 10V. This part has a typical lead time of 182 Days from factory. Order IRFP2907PBFXKMA1 from Simplytronix for authenticated stock and same-day order processing.
