*For representation only.
IMSQ120R012M2HHXUMA1
SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Technical Specifications
| Technology | SiCFET (Silicon Carbide) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 121A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 57A, 18V |
| Vgs(th) (Max) @ Id | 5.1V @ 17.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 109nC @ 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 4050pF @ 800V |
| Power - Max | 758W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad |
| Supplier Device Package | PG-HDSOP-16-221 |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 750 |
4,146
In Stock
Packaging: Reel
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 30 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
