*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 840 V |
| Current - Continuous Drain (Id) @ 25°C | 198A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 129.7A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 28.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 5854 pF @ 500 V |
| Power Dissipation (Max) | 651W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
6,231
In Stock
Packaging: Reel
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 364 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| ECCN | EAR99 |
