*For representation only.
⚙
Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.25V |
| Frequency - Transition | 80GHz |
| Noise Figure (dB Typ @ f) | 0.85dB @ 5.5GHz |
| Gain | 18.5dB |
| Power - Max | 75mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4-2 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | BFP 840ESD H6327 |
| Suggested Replacement |
7,023
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 26 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Infineon Technologies, the BFP840ESDH6327XTSA1 is classified as a rf bipolar transistors. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 2.25V, a frequency, transition of 80GHz, a noise figure of 0.85dB @ 5.5GHz, a gain of 18.5dB and a power, max of 75mW. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Order BFP840ESDH6327XTSA1 from Simplytronix for authenticated stock and same-day order processing.
