*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
| Gain | 22dB |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-3D |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | BFP 182W H6327 |
| Suggested Replacement |
8,375
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The BFP182WH6327XTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 12V, a frequency, transition of 8GHz, a noise figure of 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz, a gain of 22dB and a power, max of 250mW. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BFP182WH6327XTSA1 in stock, backed by a genuine parts guarantee and quick dispatch.
