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iS20M028S1P

MOSFETs SuperQ power MOSFET 200 V, 25m? max, normal threshold level in TO-220 package
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.1V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 100 V
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Product Attributes
Packaging Tube
Standard Pack Qty50
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,524
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 84 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
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