*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 65 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 500mA, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.45 nC @ 5 V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 52 pF @ 32.5 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
8,485
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290040 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
EPC's EPC8009 is a widely used gan fets in electronic designs. Key specifications include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 65 V, a current, continuous drain (id) @ 25°C of 4A (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 130mOhm @ 500mA, 5V. This part has a typical lead time of 126 Days from factory. Order EPC8009 from Simplytronix for authenticated stock and same-day order processing.
