*For representation only.
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Technical Specifications
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
3,122
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by EPC, the EPC2106 is classified as a gan fets. Key specifications include a technology of GaNFET (Gallium Nitride), a configuration of 2 N-Channel (Half Bridge), a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 1.7A, a rds on (max) @ id, vgs of 70mOhm @ 2A, 5V and a vgs(th) (max) @ id of 2.5V @ 600µA. This part has a typical lead time of 126 Days from factory. Simplytronix stocks EPC2106 for same-day shipping with genuine parts guaranteed.
