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EPC2090 EPC
*For representation only.

EPC2090

EPC Active
GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1328 pF @ 50 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,281
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290040
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The EPC2090 from EPC falls under the gan fets category. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 46A (Tc), a drive voltage of 5V and a rds on (max) @ id, vgs of 5.2mOhm @ 16A, 5V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source EPC2090 through Simplytronix, with fast shipping and verified authenticity.

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