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EPC2367 EPC
*For representation only.

EPC2367

EPC Active
GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 78A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2170 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-QFN (3.3x3.3)
Package / Case 5-PowerWQFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,047
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

EPC's EPC2367 is a widely used gan fets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 78A (Tj), a drive voltage of 5V and a rds on (max) @ id, vgs of 1.2mOhm @ 30A, 5V. This part has a typical lead time of 126 Days from factory. You can source EPC2367 through Simplytronix, with fast shipping and verified authenticity.

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