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EPC2221 EPC
*For representation only.

EPC2221

EPC Active
GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
Technical Specifications
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Dual) Common Source
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 5A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,077
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290040
Product Overview

Manufactured by EPC, the EPC2221 is classified as a gan fets. Notable characteristics of this part include a technology of GaNFET (Gallium Nitride), a configuration of 2 N-Channel (Dual) Common Source, a FET feature of -, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 5A and a rds on (max) @ id, vgs of -. This part has a typical lead time of 126 Days from factory. You can source EPC2221 through Simplytronix, with fast shipping and verified authenticity.

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