*For representation only.
EPC2103
EPC
Active
GaN FETs EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
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Technical Specifications
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 28A |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 40V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 500 |
12,769
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290040 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The EPC2103 from EPC falls under the gan fets category. It features a technology of GaNFET (Gallium Nitride), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 80V, a current, continuous drain (id) @ 25°C of 28A and a rds on (max) @ id, vgs of 5.5mOhm @ 20A, 5V. This part has a typical lead time of 126 Days from factory. Simplytronix carries EPC2103 in stock, backed by a genuine parts guarantee and quick dispatch.
