*For representation only.
EPC2102
EPC
Active
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
⚙
Technical Specifications
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 500 |
5,065
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New at Mouser |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290040 |
ℹ
Product Overview
EPC2102 is a gan fets manufactured by EPC. Notable characteristics of this part include a technology of GaNFET (Gallium Nitride), a configuration of 2 N-Channel (Half Bridge), a FET feature of -, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 23A and a rds on (max) @ id, vgs of 4.4mOhm @ 20A, 5V. This part has a typical lead time of 126 Days from factory. Simplytronix stocks EPC2102 for same-day shipping with genuine parts guaranteed.
