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EPC2069 EPC
*For representation only.

EPC2069

EPC Active
GaN FETs EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type -
Supplier Device Package -
Package / Case -
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,038
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290040
Product Overview

Manufactured by EPC, the EPC2069 is classified as a gan fets. Key specifications include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of -, a drive voltage of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 126 Days from factory. Simplytronix stocks EPC2069 for same-day shipping with genuine parts guaranteed.

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