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EPC2055 EPC
*For representation only.

EPC2055

EPC Active
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1254 pF @ 20 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,347
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290040
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by EPC, the EPC2055 is classified as a gan fets. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 29A (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 4.2mOhm @ 15A, 5V. This part has a typical lead time of 126 Days from factory. Order EPC2055 from Simplytronix for authenticated stock and same-day order processing.

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