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EPC2052 EPC
*For representation only.

EPC2052

EPC Active
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,954
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290040
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The EPC2052 from EPC falls under the gan fets category. It features a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 8.2A (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 13.5mOhm @ 11A, 5V. This part has a typical lead time of 126 Days from factory. You can source EPC2052 through Simplytronix, with fast shipping and verified authenticity.

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