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EPC2014C EPC
*For representation only.

EPC2014C

EPC Active
GaN FETs EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 20 V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,975
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 126 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290040
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

EPC2014C is a gan fets manufactured by EPC. Key specifications include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 10A (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 16mOhm @ 10A, 5V. This part has a typical lead time of 126 Days from factory. Simplytronix carries EPC2014C in stock, backed by a genuine parts guarantee and quick dispatch.

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