Similar Products
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 38.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 54.6 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1078 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
The DMWSH120H90SCT7Q-13 from Diodes Incorporated falls under the sic mosfets category. Key specifications include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 38.2A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 90mOhm @ 20A, 15V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order DMWSH120H90SCT7Q-13 from Simplytronix for authenticated stock and same-day order processing.
