*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 173.7 nC @ 15 V |
| Vgs (Max) | +19V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 3944 pF @ 1000 V |
| Power Dissipation (Max) | 429W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
6,751
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
DMWSH120H28SM4 is a sic mosfets manufactured by Diodes Incorporated. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 100A (Tc), a drive voltage of 15V and a rds on (max) @ id, vgs of 28.5mOhm @ 50A, 15V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source DMWSH120H28SM4 through Simplytronix, with fast shipping and verified authenticity.
