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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 6.58A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 1000 V |
| Power Dissipation (Max) | 73.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
13,069
In Stock
Packaging: Tube
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Test Report Available Upon Request
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Reported Lead Time | 112 Days (from factory) |
Documentation
Not Available
Compliance & Export Information
| Country | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Product Overview
DMWSH170H850HM4 by Diodes Incorporated is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
