Similar Products
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 6.58A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 1000 V |
| Power Dissipation (Max) | 73.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 196 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
DMWSH170H850HM4 is a sic mosfets manufactured by Diodes Incorporated. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1700 V, a current, continuous drain (id) @ 25°C of 6.58A (Tj), a drive voltage of 18V, 20V and a rds on (max) @ id, vgs of 850mOhm @ 2A, 20V. This part has a typical lead time of 196 Days from factory. You can source DMWSH170H850HM4 through Simplytronix, with fast shipping and verified authenticity.
