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2N7002DW-7-F

MOSFETs 60V 200mW
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 230mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Power - Max 310mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Product Attributes
Packaging Reel
Standard Pack Qty3000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,031
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 280 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

2N7002DW-7-F by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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