*For representation only.
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 906pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Supplier Device Package | U-DFN2030-6 (Type B) |
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
Alternate / Replacement Parts
| Alternate Packaging | DMP2100UFU-13 |
| Suggested Replacement |
3,122
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Packaging: Reel
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Test Report Available Upon Request
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Reported Lead Time | 84 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Product Overview
DMP2100UFU-7 by Diodes Incorporated is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
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